During my RF design career with Motorola and with Raytheon (formerly Magnavox), I designed many military and commercial solid-state RF power amplifiers ranging from 10 W to 1 KW from 30 MHz to 2 GHz using constant envelope waveforms (FM, for example) and non-constant envelope waveforms (OFDM, for example) employing bipolar junctions transistors, vertical MOSFETs, LDMOS and ultimately GaN. I even played around with a silicon carbide (SiC) transistor, but that didnít go anywhere.
Impact of SWR on Eff of PA
Design Issues for a VHF-UHF Solid State RF Power Amplifier
Characterizing an RF Power Amplifier with Pin and Pout Data